Ardali, S. Et Al. 2015. The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation. Physica Status Solidi (B) Basic Research , vol.252, no.9 , 1960-1965.

Ardali, S., Atmaca, G., LİŞESİVDİN, S. B., Malin, T., Mansurov, V., Zhuravlev, K., ... TIRAŞ, E.(2015). The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation. Physica Status Solidi (B) Basic Research , vol.252, no.9, 1960-1965.

Ardali, S. Et Al. "The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation," Physica Status Solidi (B) Basic Research , vol.252, no.9, 1960-1965, 2015

Ardali, S. Et Al. "The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation." Physica Status Solidi (B) Basic Research , vol.252, no.9, pp.1960-1965, 2015

Ardali, S. Et Al. (2015) . "The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation." Physica Status Solidi (B) Basic Research , vol.252, no.9, pp.1960-1965.

@article{article, author={S. Ardali Et Al. }, title={The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation}, journal={Physica Status Solidi (B) Basic Research}, year=2015, pages={1960-1965} }