Tiras, E. Et Al. 2012. Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures. JOURNAL OF ELECTRONIC MATERIALS , vol.41, no.9 , 2350-2361.

Tiras, E., Ardali, S., Arslan, E., & Ozbay, E., (2012). Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures. JOURNAL OF ELECTRONIC MATERIALS , vol.41, no.9, 2350-2361.

Tiras, E. Et Al. "Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures," JOURNAL OF ELECTRONIC MATERIALS , vol.41, no.9, 2350-2361, 2012

Tiras, E. Et Al. "Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures." JOURNAL OF ELECTRONIC MATERIALS , vol.41, no.9, pp.2350-2361, 2012

Tiras, E. Et Al. (2012) . "Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures." JOURNAL OF ELECTRONIC MATERIALS , vol.41, no.9, pp.2350-2361.

@article{article, author={E. Tiras Et Al. }, title={Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures}, journal={JOURNAL OF ELECTRONIC MATERIALS}, year=2012, pages={2350-2361} }