Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007, Cardiff, England, 3 - 07 September 2007, pp.134-136
A theoretical investigation of a GaAs-AlGaAs infrared detector consisting of three asymmetric quantum wells is presented. Each quantum well is sensitive to yield absorption and a photoresponse at peak wavelengths of 8 μm, 9.5 μm and 10.8 μm respectively. Device operation is based on inter-subband bound-to-bound transition. Asymmetry in the quantum wells is shown to give broad band responsivity spectrum at an operating bias.