Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

DEMİR İ., ALTUNTAŞ İ., Bulut B., Ezzedini M., ERGÜN Y., Elagoz S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.33, no.5, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 5
  • Publication Date: 2018
  • Doi Number: 10.1088/1361-6641/aab9d3
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: InGaAs, MOVPE, V/III ratio, carrier concentration, V/III RATIO, GAAS, TERTIARYBUTYLARSINE, TEMPERATURE
  • Anadolu University Affiliated: Yes


We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 x 10(19) cm(-3) carrier concentration and 1530 cm(2) V-1 s(-1) mobility.