Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.33, no.5, 2018 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 33 Issue: 5
- Publication Date: 2018
- Doi Number: 10.1088/1361-6641/aab9d3
- Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Keywords: InGaAs, MOVPE, V/III ratio, carrier concentration, V/III RATIO, GAAS, TERTIARYBUTYLARSINE, TEMPERATURE
- Anadolu University Affiliated: Yes
Abstract
We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 x 10(19) cm(-3) carrier concentration and 1530 cm(2) V-1 s(-1) mobility.