FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

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MATERIALS SCIENCE-POLAND, vol.35, no.4, pp.824-829, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 4
  • Publication Date: 2017
  • Doi Number: 10.1515/msp-2017-0091
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.824-829
  • Keywords: B doped ZnO, electrodeposition, rod-shaped morphology, Kubelka-Munk, HETEROJUNCTION DIODE, AQUEOUS-SOLUTION, THIN-FILMS, THICKNESS
  • Anadolu University Affiliated: Yes


In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type silicon (Si) substrates by electrodeposition method using chronoamperometry technique. Electrochemical depositions were performed by applying a constant potentiostatic voltage of 1.1 V for 180 min at 90 degrees C bath temperature. To analyze the surface morphology, field emission scanning electron microscopy (FESEM) was used and the results revealed that while a small amount of boron resulted in smoother surface, a little more incorporation of boron changed the surface morphology to dandelion-like shaped rods on the whole surface. By using X-ray diffraction (XRD) analysis, the crystal structures of the films were detected and the preferred orientation of the ZnO, which exhibited polycrystalline and hexagonal wurtzite structure, changed with B doping. For the estimation of the optical band gap of obtained films, UV-Vis diffuse reflectance spectra (DRS) of the films were taken at room temperature and these data were applied to the Kubelka-Munk function. The optical band gap of ZnO narrowed due to incorporation of B, which was confirmed by red-shift.