Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil, H.; Mazzucato, S.; Ardali, S.; Celik, O.; MUTLU, Selman; Royall, B.; Tiras, E.; Balkan, N.; Puustinen, J.; Korpijarvi, V.; Guina, M.

doi:10.1016/j.mseb.2011.12.022

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil H. M., Mazzucato S., Ardali S., Celik O., MUTLU S., Royall B., ...More

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol.177, no.10, pp.729-733, 2012 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 177 Issue: 10
Publication Date: 2012
Doi Number: 10.1016/j.mseb.2011.12.022
Journal Name: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.729-733
Keywords: p-i-n diodes, Resonant tunnelling, GaInNAs/GaAs, Multiple quantum well, Dilute nitrides
Anadolu University Affiliated: Yes

Abstract

The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I-V and at temperatures above T=200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission.