Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil, H.; Mazzucato, S.; Ardali, S.; Celik, O.; MUTLU, Selman; Royall, B.; Tiras, E.; Balkan, N.; Puustinen, J.; Korpijarvi, V.; Guina, M.

doi:10.1016/j.mseb.2011.12.022

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil H. M., Mazzucato S., Ardali S., Celik O., MUTLU S., Royall B., ...Daha Fazla

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.10, ss.729-733, 2012 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 177 Sayı: 10
Basım Tarihi: 2012
Doi Numarası: 10.1016/j.mseb.2011.12.022
Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.729-733
Anahtar Kelimeler: p-i-n diodes, Resonant tunnelling, GaInNAs/GaAs, Multiple quantum well, Dilute nitrides
Anadolu Üniversitesi Adresli: Evet

Özet

The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I-V and at temperatures above T=200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission.