XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions

Creative Commons License

ILICAN S., ÇAĞLAR M., AKSOY S., ÇAĞLAR Y.

JOURNAL OF NANOMATERIALS, vol.2016, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 2016
  • Publication Date: 2016
  • Doi Number: 10.1155/2016/6729032
  • Journal Name: JOURNAL OF NANOMATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anadolu University Affiliated: Yes

Abstract

The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. The p-Si/n-ZnO and p-Si/n-FZN heterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (phi(B)), and series resistance (R-s) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde's function, and Cheung's method. There is a good agreement between the diode parameters obtained from different methods.