XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions
JOURNAL OF NANOMATERIALS, vol.2016, 2016 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 2016
- Publication Date: 2016
- Doi Number: 10.1155/2016/6729032
- Journal Name: JOURNAL OF NANOMATERIALS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Open Archive Collection: AVESIS Open Access Collection
- Anadolu University Affiliated: Yes
Abstract
The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. The p-Si/n-ZnO and p-Si/n-FZN heterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (phi(B)), and series resistance (R-s) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde's function, and Cheung's method. There is a good agreement between the diode parameters obtained from different methods.