Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Atmaca, G.; Ardali, S.; Narin, P.; Kutlu, E.; LİŞESİVDİN, SEFER; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tiras, E.

doi:10.1016/j.jallcom.2015.11.056

Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Atmaca G., Ardali S., Narin P., Kutlu E., LİŞESİVDİN S. B., Malin T., ...More

JOURNAL OF ALLOYS AND COMPOUNDS, vol.659, pp.90-94, 2016 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 659
Publication Date: 2016
Doi Number: 10.1016/j.jallcom.2015.11.056
Journal Name: JOURNAL OF ALLOYS AND COMPOUNDS
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.90-94
Keywords: Surface passivation, GaN, Mobility, Energy relaxation, QUANTUM-WELLS, MOBILITY, GAN, SCATTERING, TRANSPORT, GAN/ALGAN, RATES
Anadolu University Affiliated: Yes

Abstract

In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250 K. (C) 2015 Elsevier B.V. All rights reserved.