JOURNAL OF ALLOYS AND COMPOUNDS, vol.659, pp.90-94, 2016 (SCI-Expanded)
In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250 K. (C) 2015 Elsevier B.V. All rights reserved.