Structural, optical and electrical properties of F-doped ZnO nanorod semiconductor thin films deposited by sol-gel process

ILICAN S., ÇAĞLAR Y., ÇAĞLAR M., YAKUPHANOĞLU F.

APPLIED SURFACE SCIENCE, cilt.255, sa.5, ss.2353-2359, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 255 Sayı: 5
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.apsusc.2008.07.111
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2353-2359
  • Anahtar Kelimeler: Fluorine-doped ZnO, Sol-gel spin coating, Single-oscillator model, Electrical properties, CHEMICAL-BATH DEPOSITION, SUBSTRATE-TEMPERATURE, PHYSICAL-PROPERTIES, AMORPHOUS-SILICON, FLUORINE, FABRICATION, TRANSPARENT, CONDUCTION, SPRAY, LI
  • Anadolu Üniversitesi Adresli: Evet

Özet

Structural, optical and electrical properties of fluorine-doped ZnO nanostructure semiconductor thin films prepared by sol-gel spin coating method have been investigated. The thin films have polycrystalline structure with a preferential growth along the ZnO (0 0 2) plane. The grain size for the films was found to be in the range of 24-35 nm. Scanning electron microscopy (SEM) images clearly revealed that the 10% F-doped ZnO film was composed of nanorods. Transmittance spectra of the films indicate that the films have high transparency. The optical band gap and Urbach energy of the F-doped ZnO films vary with fluorine doping.