APPLIED SURFACE SCIENCE, vol.255, no.5, pp.2353-2359, 2008 (SCI-Expanded)
Structural, optical and electrical properties of fluorine-doped ZnO nanostructure semiconductor thin films prepared by sol-gel spin coating method have been investigated. The thin films have polycrystalline structure with a preferential growth along the ZnO (0 0 2) plane. The grain size for the films was found to be in the range of 24-35 nm. Scanning electron microscopy (SEM) images clearly revealed that the 10% F-doped ZnO film was composed of nanorods. Transmittance spectra of the films indicate that the films have high transparency. The optical band gap and Urbach energy of the F-doped ZnO films vary with fluorine doping.