In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy

Tiras E., Gunes M., Balkan N., Schaff W. J.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.247, no.1, pp.189-193, 2010 (SCI-Expanded) identifier identifier


The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In(1-x)G(x)N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim