In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.247, sa.1, ss.189-193, 2010 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 247 Sayı: 1
- Basım Tarihi: 2010
- Doi Numarası: 10.1002/pssb.200945144
- Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.189-193
- Anadolu Üniversitesi Adresli: Hayır
Özet
The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In(1-x)G(x)N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim