Improved mobility of the copper phthalocyanine thin-film transistor

YAKUPHANOĞLU F., ÇAĞLAR M., ÇAĞLAR Y., ILICAN S.

SYNTHETIC METALS, vol.160, no.13-14, pp.1520-1523, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 160 Issue: 13-14
  • Publication Date: 2010
  • Doi Number: 10.1016/j.synthmet.2010.05.013
  • Journal Name: SYNTHETIC METALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1520-1523
  • Keywords: Organic thin-film transistor, Copper phthalocyanine, Thermal evaporation, FIELD-EFFECT TRANSISTORS, DIELECTRIC ROUGHNESS, PERFORMANCE, LAYER, MONOLAYERS, THICKNESS, INTERFACE
  • Anadolu University Affiliated: Yes

Abstract

Copper phthalocyanine (CuPc) organic thin-film transistor (OTFT) was fabricated by thermal evaporation deposition on p-SiO2 dielectric layer. Organic thin-film transistors used in large display areas need the enhancement of transistor performances by increasing the I-on/I-off ratio and the mobility. The output and transfer characteristics of CuPc-OTFF having source/drain interdigitated-finger geometry were investigated. The mobility, I-on/I-off ratio and inverse sub-threshold slope for the CuPc-OTFT were found to be 5.32 x 10(-3) cm(2) V-1 s(-1), 1.94 x 10(4) and 2.5 V/decade, respectively. The interface state density of the transistor was found to be 3.73 x 10(11) eV(-1) cm(-2) using the conductance-frequency method. The CuPc film indicated a homogeneous surface having 3.878 nm small roughness values as observed by atomic force microscope (AFM) measurements. The obtained results indicate that we have improved a CuPc-OTFT transistor with high mobility without being of any substrate treatment. (C) 2010 Elsevier B.V. All rights reserved.