Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors

NUTKU F., EROL A., Arikan M. C., ERGÜN Y.

Applied Surface Science, vol.318, pp.95-99, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Abstract
  • Volume: 318
  • Publication Date: 2014
  • Doi Number: 10.1016/j.apsusc.2014.01.054
  • Journal Name: Applied Surface Science
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.95-99
  • Keywords: Zero-bias offset, I-V characterization, Dark current, QWIP, Quantum well devices, Infrared photodetectors, Asymmetric barrier, IMPACT IONIZATION, LOW-TEMPERATURE, GAAS, ASYMMETRY, BARRIERS, INP
  • Anadolu University Affiliated: Yes

Abstract

© 2014 Elsevier B.V. All rights reserved.In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector.