Copper (II) Phthalocyanine Based Field Effect Transistors with Organic/Inorganic Bilayer Gate Dielectric
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.10, sa.6, ss.717-722, 2015 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 10 Sayı: 6
- Basım Tarihi: 2015
- Doi Numarası: 10.1166/jno.2015.1827
- Dergi Adı: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.717-722
- Anahtar Kelimeler: CuPc, OFET, Bilayer Gate Insulator, PVA, Al2O3, THIN-FILM TRANSISTORS, MOBILITY, TEMPERATURE
- Anadolu Üniversitesi Adresli: Evet
Özet
High mobility Copper (II) phthalocyanine (CuPc) organic field effect transistor (OFET) with Polyvinyl Alcohol (PVA)/Anodized Aluminium Oxide (Al2O3) bilayer gate dielectric was fabricated. The morphology of CuPc active layer and electrical properties of OFET were investigated. The CuPc-OFET exhibited the p-channel behavior due to the p-type electrical conductivity of the CuPc active layer. Field-effect carrier mobility (mu) value of 0.06 cm(2)/Vs, which is attributed to the use of bilayer dielectric combined with the organic and inorganic materials as gate insulator, was obtained. As a result of capacitance-voltage (C-V) the bilayer gate dielectric capacitance per unit area was found 40 nF/cm(2). This capacitance indicates that dielectric film obtained by a combination of organic and inorganic materials has a good quality. Experimental results showed that bilayer gate dielectric is a promising insulator for the low drive voltage CuPc-OFETs.