Copper (II) Phthalocyanine Based Field Effect Transistors with Organic/Inorganic Bilayer Gate Dielectric

RÜZGAR Ş., ÇAĞLAR M.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.10, no.6, pp.717-722, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 6
  • Publication Date: 2015
  • Doi Number: 10.1166/jno.2015.1827
  • Journal Name: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.717-722
  • Keywords: CuPc, OFET, Bilayer Gate Insulator, PVA, Al2O3, THIN-FILM TRANSISTORS, MOBILITY, TEMPERATURE
  • Anadolu University Affiliated: Yes

Abstract

High mobility Copper (II) phthalocyanine (CuPc) organic field effect transistor (OFET) with Polyvinyl Alcohol (PVA)/Anodized Aluminium Oxide (Al2O3) bilayer gate dielectric was fabricated. The morphology of CuPc active layer and electrical properties of OFET were investigated. The CuPc-OFET exhibited the p-channel behavior due to the p-type electrical conductivity of the CuPc active layer. Field-effect carrier mobility (mu) value of 0.06 cm(2)/Vs, which is attributed to the use of bilayer dielectric combined with the organic and inorganic materials as gate insulator, was obtained. As a result of capacitance-voltage (C-V) the bilayer gate dielectric capacitance per unit area was found 40 nF/cm(2). This capacitance indicates that dielectric film obtained by a combination of organic and inorganic materials has a good quality. Experimental results showed that bilayer gate dielectric is a promising insulator for the low drive voltage CuPc-OFETs.