Preparation and characterization of ZnO thin films deposited by sol-gel spin coating method

Ilican S., Caglar Y., Caglar M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.10, sa.10, ss.2578-2583, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 10
  • Basım Tarihi: 2008
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2578-2583
  • Anahtar Kelimeler: ZnO, sol-gel spin coating, crystal structure, optical band gap, I-V characteristics, PULSED-LASER DEPOSITION, OPTICAL-CONSTANTS
  • Anadolu Üniversitesi Adresli: Evet

Özet

ZnO thin films have been deposited onto the glass substrates by the sol-gel spin coating method at different chuck rotation rates. This method was used for the preparation of thin films of the important semiconductors H-VI. The effect of deposition parameters on the structural, optical and electrical properties of the ZnO thin films was investigated. Zinc acetate dehydrate, 2-methoxethanol and monoethanolamine (MEA) were used as a starting material, solvent and stabilizer, respectively. Thermogravimetric analysis (TGA) of the dried gel showed that weight loss continued until 300 degrees C. The crystal structure and orientation of the ZnO thin films were investigated by X-ray diffraction (XRD) patterns, The grain size of the films was calculated using the Scherrer formula. The optical absorbance and transmittance measurements were recorded by using a double beam spectrophotometer with an integrating sphere in the wavelength range 190-900 nm. The optical absorption studies reveal that the transition is direct band gap energy. The optical band gaps and Urbach energies of the thin films were determined. The I-V plots of the ZnO thin films were carried out in dark and under UV-illumination. The obtained ZnO thin films can be used as a photovoltaic material.