Band gap energies of CdO : F semiconductor films produced by ultrasonic spray pyrolysis method
6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.608, (Full Text)
- Publication Type: Conference Paper / Full Text
- Volume: 899
- Doi Number: 10.1063/1.2733349
- City: İstanbul
- Country: Turkey
- Page Numbers: pp.608
- Keywords: cadmium oxide, fluorine, ultrasonic spray pyrolysis, and band gap energy
- Anadolu University Affiliated: Yes
Abstract
The fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The optical band gap (E-g) has found to be 2,28 eV for undoped CdO films. A shift in the absorption edge of the fluorine doped CdO films with increasing fluorine concentration is explained by means of the Moss-Burstein effect.