Towards atomic scale engineering of rare-earth-doped SiAlON ceramics through aberration-corrected scanning transmission electron microscopy

YURDAKUL H., Idrobo J. C., Pennycook S. J., TURAN S.

SCRIPTA MATERIALIA, vol.65, no.8, pp.656-659, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 8
  • Publication Date: 2011
  • Doi Number: 10.1016/j.scriptamat.2011.06.038
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.656-659
  • Keywords: Ceramics, Rare earth, Scanning transmission electron microscope (STEM), SiAlON, Z-contrast microscopy, LIGHT-EMITTING-DIODES, ALPHA-SIALON, OPTICAL-PROPERTIES, PHOSPHORS, PHOTOLUMINESCENCE, STABILITY, NITRIDE, YTTRIUM, POWDER, SIAION
  • Anadolu University Affiliated: Yes


Direct visualization of rare earths in alpha- and beta-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of beta-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in alpha-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in beta-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.