JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.9, no.5, pp.618-623, 2014 (SCI-Expanded)
Nanostructure zinc oxide (ZnO) films have been deposited by sol gel dip coating method on ITO substrates. The concentrations of ZnAc solution were adjusted as 0.25, 0.35, 0.45 and 0.55 M. ITO substrate was dipped at withdrawn speed of 8 mm/min and coated as ten layers at 300 degrees C. XRD results were evaluated to understand the effect of sol concentration on the crystalline structure and orientation of the films. The films exhibited (002) preferred orientation. As a result of scanning electron microscopy (SEM) measurements it was determined that the grain size slightly increased by concentration. The electrical transport characteristics (hall mobility and electron concentration) were investigated by a Hall measurement system using the Van der Pauw configuration under 0.55 T magnetic field at room temperature. The highest Hall mobility of 4.78 x 10(-1) cm(2)/Vs and the lowest electrical resistivity of 3.09 x 10(-1) Omega, cm were attained at the concentration of 0.55 M.