The Effect of Sol Concentration on the Structural and Electrical Parameters of Nanostructure ZnO Films by Sol Gel Dip Coating


Ilgu G., ÇAĞLAR Y., ILICAN S., ÇAĞLAR M., RÜZGAR Ş.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.9, sa.5, ss.618-623, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9 Sayı: 5
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1166/jno.2014.1644
  • Dergi Adı: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.618-623
  • Anahtar Kelimeler: ZnO Film, Nanostructure, Sol Gel Dip Coating, Hall-Effect-Measurement, THIN-FILMS, OPTICAL-PROPERTIES, DEPOSITION TEMPERATURE, AL
  • Anadolu Üniversitesi Adresli: Evet

Özet

Nanostructure zinc oxide (ZnO) films have been deposited by sol gel dip coating method on ITO substrates. The concentrations of ZnAc solution were adjusted as 0.25, 0.35, 0.45 and 0.55 M. ITO substrate was dipped at withdrawn speed of 8 mm/min and coated as ten layers at 300 degrees C. XRD results were evaluated to understand the effect of sol concentration on the crystalline structure and orientation of the films. The films exhibited (002) preferred orientation. As a result of scanning electron microscopy (SEM) measurements it was determined that the grain size slightly increased by concentration. The electrical transport characteristics (hall mobility and electron concentration) were investigated by a Hall measurement system using the Van der Pauw configuration under 0.55 T magnetic field at room temperature. The highest Hall mobility of 4.78 x 10(-1) cm(2)/Vs and the lowest electrical resistivity of 3.09 x 10(-1) Omega, cm were attained at the concentration of 0.55 M.