Electrical characterization of ZnO/organic semiconductor diode
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.10, no.10, pp.2584-2587, 2008 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 10 Issue: 10
- Publication Date: 2008
- Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.2584-2587
- Keywords: Inorganic/organic semiconductor diode, Series resistance, ZNO THIN-FILMS, OPTICAL-PROPERTIES, SCHOTTKY-BARRIER
- Anadolu University Affiliated: Yes
Abstract
The electrical characterization of IZO/FSS/Al diode has been investigated current-voltage method. The ideality factor of the diode was found to be 2.84, which confirm that the IZO/FSS/Al device indicates a non-ideal I-V behaviour. The effect of series resistance was evaluated using a method developed by Cheung. The R-s and n values were determined from the dV/dln(I)-I plot and were found to be 8.00 k Omega and 2.84, respectively. The barrier height and R. values were calculated from H(I)-I plot and were found to be 0.86 eV and 7.83 k Omega At higher voltages, I-V characteristics of the diode are affected by the electrical properties. This suggests that at higher voltages, the current flow in the diode is controlled by the space limited current mechanism.