The electrical characterization of IZO/FSS/Al diode has been investigated current-voltage method. The ideality factor of the diode was found to be 2.84, which confirm that the IZO/FSS/Al device indicates a non-ideal I-V behaviour. The effect of series resistance was evaluated using a method developed by Cheung. The R-s and n values were determined from the dV/dln(I)-I plot and were found to be 8.00 k Omega and 2.84, respectively. The barrier height and R. values were calculated from H(I)-I plot and were found to be 0.86 eV and 7.83 k Omega At higher voltages, I-V characteristics of the diode are affected by the electrical properties. This suggests that at higher voltages, the current flow in the diode is controlled by the space limited current mechanism.