ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.13, no.3, pp.137-140, 2010 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 13 Issue: 3
- Publication Date: 2010
- Doi Number: 10.1016/j.mssp.2010.05.005
- Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.137-140
- Keywords: ZnO, Sol-gel spin coating, Nanostructure, Photodiode, THIN-FILMS, OPTICAL-PROPERTIES, SPRAY-PYROLYSIS, FABRICATION, GROWTH
- Anadolu University Affiliated: Yes
Abstract
The electrical and photovoltaic properties of the nanostructure ZnO/p-Si diode have been investigated. The nanostructure ZnO/p-Si diode was fabricated using sot-gel spin coating method. The ideality factor and barrier height of the diode were found to be 3.18 and 0.78 eV, respectively. The obtained n ideality factor is higher than 2, indicating that the diode exhibits a non-ideal behavior due to the oxide layer and the presence of surface states. The nanostructure of the ZnO improves the quality of ZnO/p-Si interface. The diode shows a photovoltaic behavior with a maximum open circuit voltage V(oc) of 0.26 V and short-circuits current I(sc) of 1.87 x 10(-8) A under 100 mW/cm(2). It is evaluated that the nanostructure ZnO/p-Si diode is a photodiode with the obtained electronic parameters. (C) 2010 Elsevier Ltd. All rights reserved.