The variation of electronic properties with the doping concentration of modulation-doped AlxGa1-xAs-GaAs double quantum wells

Ungan F., ÖZTÜRK E., Ergun Y., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.41, no.1, pp.22-28, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 1
  • Publication Date: 2007
  • Doi Number: 10.1016/j.spmi.2006.09.006
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.22-28
  • Keywords: low dimensional systems, double quantum well, TUNNELING TIMES, OSCILLATIONS, EXCITATIONS, MODES
  • Anadolu University Affiliated: Yes


In this paper we have calculated the sub-band structure and the confinement potential of modulation-doped Ga1-xAlxAs-GaAs double quantum wells as a function of the doping concentration. The electronic properties of this structure were determined by self-consistent solutions of the Schrodinger and Poisson equations. To understand the effects of doping concentration on band bending, sub-band energies, and sub-band populations, the doping concentration on one right side of the structure is decreased while holding it constant on the left side. We found that at low doping concentrations on the right side, the effects of the doping concentration are more pronounced on band bending and sub-band populations. (c) 2006 Elsevier Ltd. All rights reserved.