Superconductivity in heavily compensated Mg-doped InN

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Tiras E., Gunes M., Balkan N., Airey R., Schaff W. J.

APPLIED PHYSICS LETTERS, vol.94, no.14, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 94 Issue: 14
  • Publication Date: 2009
  • Doi Number: 10.1063/1.3116120
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: electron density, Hall effect, indium compounds, Josephson effect, magnesium, magnetoresistance, metal-insulator transition, nanoparticles, superconducting materials, superconducting transition temperature, FUNDAMENTAL-BAND GAP, ENERGY, EMISSION
  • Anadolu University Affiliated: No


We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The two-dimensional (2D) carrier density of the measured sample is n(2D)=9x10(14) cm(-2) corresponding to a three-dimensional (3D) electron density of n(3D)=1.8x10(19) cm(-3) which is within the range of values between Mott transition and the superconductivity to metal transition. We propose a plausible mechanism to explain the existence of the superconductivity in terms of a uniform distribution of superconducting InN nanoparticles or nanosized indium dots forming microscopic Josephson junctions in the heavily compensated insulating bulk InN matrix.