Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements

Tiras E.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.14, no.9-10, pp.787-791, 2012 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 14 Issue: 9-10
  • Publication Date: 2012
  • Journal Name: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.787-791
  • Keywords: GaN heterostructure, Raman spectra, Electron effective mass, Phonon-plasmon coupled-mode, PLASMON COUPLED MODES, GAS, BAND
  • Anadolu University Affiliated: Yes

Abstract

The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements. The vibrational properties of AlGaN/AlN/GaN heterostructures were studied using Raman scattering spectroscopy at room temperature. 532 nm (2.33 eV) was used as the excitations in the Raman scattering measurement. The effective mass obtained from the Raman scattering spectroscopy is in good agreement with the current results in the literature.