Structural, Optical and Electrical Properties of Erbium-Doped ZnO Thin Films Prepared by Spin Coating Method

ILICAN S.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, cilt.11, sa.4, ss.465-471, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 4
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1166/jno.2016.1934
  • Dergi Adı: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.465-471
  • Anahtar Kelimeler: Er Doped ZnO Film, Spin Coating, Optical Constants, Microstructure, Crystallinity, Hall Effect, SOL-GEL METHOD, ELECTROOPTICAL PROPERTIES, ER, OXIDE, PHOTOLUMINESCENCE, MORPHOLOGY, SUBSTRATE
  • Anadolu Üniversitesi Adresli: Evet

Özet

In order to investigate the influence of erbium (Er) content on morphological, structural and optical properties of ZnO films, both undoped and Er doped ZnO films were prepared by sol gel method using spin coating technique. Surface properties of these films were analyzed by scanning electron microscopy (SEM). It was clearly observed from SEM micrographs that surface of 1% Er-doped ZnO film made up of nanorods. X-ray diffraction (XRD) spectra showed that all the films were crystallized in the hexagonal wurtzite phase with a preferential orientation along the c-axis. The crystalline quality of undoped ZnO film deteriorated with the erbium. At the visible region, the average optical transmittance values of all the films are greater than 84%. The values of absorption band edge were determined from plot of the first derivative of the optical transmittance versus wavelengths. The optical constants of the films were calculated using transmittance and reflectance spectra. Hall Effect measurements reveal that the prepared films have n-type conductivity and their electrical resistivity's has increased significantly with Er content.