Zincblende semiconductor CuInS2 has not been focus of studies until recently. Ultrasonic spray pyrolysis (USP) method is used to deposit zincblende CuInS2 nanostructured film on glass substrate at 250 degrees C in this study. The film was characterized by vibrational (FT-IR and Raman) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectra. The crystallite size was calculated to be around 30 nm by using the well-known Scherrer equation with the peak corresponding to (111) plane. The Raman peak at 306 cm(-1) is assigned to the A(1) mode of the CuAu-ordered CuInS2. Thus, metastable cubic zincblende structure would be evidenced. The absorption coefficient of the film has been found to be in the order of 10(4)-10(5) cm(-1), which make it promising for an intensive optoelectronic application.