The quantum confined Stark effect in silicon nanocrystals

Kulakci M., SERİNCAN U., TURAN R., Finstad T. G.

NANOTECHNOLOGY, vol.19, no.45, 2008 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 19 Issue: 45
  • Publication Date: 2008
  • Doi Number: 10.1088/0957-4484/19/45/455403
  • Journal Name: NANOTECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anadolu University Affiliated: Yes

Abstract

The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts to higher wavelengths with increasing applied electric field, which is expected from carrier polarization within the quantum dots. It is observed that the effect is more pronounced at lower temperatures due to the improved carrier localization at the lowest energy states of the quantum dots. Experimental results are shown to be in good agreement with phenomenological model developed for the QCSE model.