Conference on Infrared Technology and Applications XXXIX, Maryland, United States Of America, 29 April - 03 May 2013, vol.8704
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6x10(-3) A/cm(2) and 148 Omega cm(2) at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 mu m with 50% cut-off wavelengths (lambda(c)) of 6 mu m. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 mu m with front-side illimunation and no anti-reflection coatings.