Erbium-doped spiral amplifiers with 20 dB of net gain on silicon
OPTICS EXPRESS, cilt.22, sa.21, ss.25993-26004, 2014 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 22 Sayı: 21
- Basım Tarihi: 2014
- Doi Numarası: 10.1364/oe.22.025993
- Dergi Adı: OPTICS EXPRESS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.25993-26004
- Anadolu Üniversitesi Adresli: Evet
Özet
Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 x 10(20) cm(-3) and 0.95 x 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied. (C) 2014 Optical Society of America