Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Vazquez-Cordova S. A., Dijkstra M., Bernhardi E. H., Ay F., Worhoff K., Herek J. L., ...More

OPTICS EXPRESS, vol.22, no.21, pp.25993-26004, 2014 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 21
  • Publication Date: 2014
  • Doi Number: 10.1364/oe.22.025993
  • Journal Name: OPTICS EXPRESS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.25993-26004
  • Anadolu University Affiliated: Yes

Abstract

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 x 10(20) cm(-3) and 0.95 x 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied. (C) 2014 Optical Society of America