Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Vazquez-Cordova S. A., Dijkstra M., Bernhardi E. H., Ay F., Worhoff K., Herek J. L., ...Daha Fazla

OPTICS EXPRESS, cilt.22, sa.21, ss.25993-26004, 2014 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 22 Sayı: 21
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1364/oe.22.025993
  • Dergi Adı: OPTICS EXPRESS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.25993-26004
  • Anadolu Üniversitesi Adresli: Evet

Özet

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 x 10(20) cm(-3) and 0.95 x 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied. (C) 2014 Optical Society of America