Complementary and alternative technique for the determination of electron effective mass: quantum Hall effect

Ardali S., Tiras E., Arslan E., Ozbay E.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.10, sa.9-10, ss.647-650, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 10 Sayı: 9-10
  • Basım Tarihi: 2016
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.647-650
  • Anahtar Kelimeler: Quantum Hail effect, Effective mass, GaN, HETEROSTRUCTURES, WELLS, FIELD, GAS
  • Anadolu Üniversitesi Adresli: Evet

Özet

The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure.