AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices

Alyoruk M., ERGÜN Y., HOŞTUT M.

Opto-Electronics Review, vol.23, no.1, pp.24-27, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 23 Issue: 1
  • Publication Date: 2015
  • Doi Number: 10.1515/oere-2015-0001
  • Journal Name: Opto-Electronics Review
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.24-27
  • Keywords: InAs/AlSb/GaSb type-II SL structure, HH-LH splitting, N-structure, DFT, layer thickness effect, ELECTRON-GAS
  • Anadolu University Affiliated: Yes


© 2015 SEP, Warsaw.This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p-i-n photodetector.eFirst principle calculations were carried out tailoring the band gap and HH-LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs-GaSb layer thicknesses enable to control HH-LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces.