Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells

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Tiras E., Balkan N., Ardali S., Gunes M., Fontaine C., Arnoult A.

PHILOSOPHICAL MAGAZINE, vol.91, no.4, pp.628-639, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 91 Issue: 4
  • Publication Date: 2011
  • Doi Number: 10.1080/14786435.2010.525543
  • Journal Name: PHILOSOPHICAL MAGAZINE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.628-639
  • Keywords: GaInNAs, effective mass, quantum lifetime, INPLANE EFFECTIVE-MASS, 1.3 MU-M, TRANSPORT MOBILITIES, OPTICAL-PROPERTIES, NITROGEN, BAND, GAINNAS, HETEROSTRUCTURES, SEMICONDUCTORS, SPECTROSCOPY
  • Anadolu University Affiliated: Yes

Abstract

Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields up to B = 11T. The momentum relaxation and the quantum lifetimes (tau(q)) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes.