Structural transformations of TiO2 films with deposition temperature and electrical properties of nanostructure n-TiO2/p-Si heterojunction diode


Journal of Alloys and Compounds, vol.613, pp.330-337, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 613
  • Publication Date: 2014
  • Doi Number: 10.1016/j.jallcom.2014.05.192
  • Journal Name: Journal of Alloys and Compounds
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.330-337
  • Keywords: TiO2 film, Sol gel spin coating, Nanostructure, Ideality factor, Conduction mechanism, SOL-GEL, THIN-FILMS, OPTICAL-PROPERTIES, ANNEALING TEMPERATURE, HEAT-TREATMENT, PARAMETERS
  • Anadolu University Affiliated: Yes


Titanium oxide (TiO2) films have been deposited on p-Si substrates by sol-gel method using spin coating technique. Structural and morphological properties were studied as a function of deposition temperatures by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The deposition temperatures were chosen from 700 °C to 1100°C. Crystallization of the anatase phase and its transformation to the rutile phase were observed at 700°C and 800°C, respectively. The fabrication of nanostructure n-TiO2/p-Si heterojunction diode was formed by using T7 film deposited at 700°C. The electrical parameters such as barrier height (b) and ideality factor (n) of nanostructure n-TiO2/p-Si heterojunction diode were investigated by using I-V measurements and observed to be 0.58 eV and 5.39, respectively. Also, the values of b and series resistance (Rs) were determined by using Cheung's and Norde methods. From the I-V measurements taken at room temperature, the space charge limited (SCLC) mechanism was determined at the low voltage region. The obtained results showed that n-TiO2/p-Si heterojunction diode is a good candidate for the applications of semiconductor electronic devices. © 2014 Elsevier B.V. All rights reserved.