Superconductivity in MBE grown InN

Gunes M., Balkan N., Tiras E., Ardali S., Ajagunna A. O., Iliopoulos E., ...More

3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, 4 - 07 July 2010, vol.8 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 8
  • Doi Number: 10.1002/pssc.201000794
  • City: Montpellier
  • Country: France
  • Keywords: InN, superconductivity, Mott transition, critical magnetic field, MOLECULAR-BEAM EPITAXY, BAND-GAP, STRUCTURAL-PROPERTIES
  • Anadolu University Affiliated: Yes


We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN layer with carrier concentration n(3D) = 1.185x10(19) cm(-3). However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10(19) cm(-3), 1.38x10(19) cm(-3), and thicknesses of 2070 and 4700 nm, respectively.