Superconductivity in MBE grown InN

Gunes M., Balkan N., Tiras E., Ardali S., Ajagunna A. O., Iliopoulos E., ...Daha Fazla

3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, Fransa, 4 - 07 Temmuz 2010, cilt.8 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 8
  • Doi Numarası: 10.1002/pssc.201000794
  • Basıldığı Şehir: Montpellier
  • Basıldığı Ülke: Fransa
  • Anahtar Kelimeler: InN, superconductivity, Mott transition, critical magnetic field, MOLECULAR-BEAM EPITAXY, BAND-GAP, STRUCTURAL-PROPERTIES
  • Anadolu Üniversitesi Adresli: Evet

Özet

We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN layer with carrier concentration n(3D) = 1.185x10(19) cm(-3). However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10(19) cm(-3), 1.38x10(19) cm(-3), and thicknesses of 2070 and 4700 nm, respectively.