Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions

TIRAŞ E., Atmaca G., LİŞESİVDİN S. B., Ardali S., Malin T., Mansurov V., ...Daha Fazla

11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Busan, Güney Kore, 24 - 28 Ağustos 2015, cilt.2, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 2
  • Doi Numarası: 10.1109/cleopr.2015.7376169
  • Basıldığı Şehir: Busan
  • Basıldığı Ülke: Güney Kore
  • Anadolu Üniversitesi Adresli: Evet

Özet

© 2015 IEEE.The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field dependencies of the Hall mobility.