Using indium chloride as an In source, In-doped SnO2 films were fabricated by sol-gel method through dip-coating on borofloat glass substrates. The undoped SnO2 films were deposited in air between 400 and 600 degrees C to get optimum deposition temperature in terms of crystal quality and hence In-doped SnO2 films were deposited in air at 600 degrees C. The effect of both deposition temperature and In content on structural, morphological, optical and electrical properties was investigated. The crystalline structure and orientation of the films were investigated by X-ray diffraction (XRD) and surface morphology was studied by a field emission scanning electron microscope (FESEM). The compositional analysis of the films was confirmed by energy dispersive X-ray spectrometer (EDS). The absorption band edge of the SnO2 films shifted from 3.88 to 3.66 eV with In content. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance was affected significantly by deposition temperature and In content. (C) 2012 Elsevier B.V. All rights reserved.