Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode

AKSOY S., ÇAĞLAR Y.

SUPERLATTICES AND MICROSTRUCTURES, vol.51, no.5, pp.613-625, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 51 Issue: 5
  • Publication Date: 2012
  • Doi Number: 10.1016/j.spmi.2012.02.018
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.613-625
  • Keywords: ZnO, Nanostructure, Sol-gel, Heterojunction semiconductor diode, Current-voltage characteristics, Ideality factor, CURRENT-VOLTAGE CHARACTERISTICS, CHEMICAL-VAPOR-DEPOSITION, PULSED-LASER DEPOSITION, SCHOTTKY DIODES, TRANSPORT MECHANISM, OPTICAL-PROPERTIES, SERIES RESISTANCE, INTERFACE STATES, AL/N-SI, FILMS
  • Anadolu University Affiliated: Yes

Abstract

The nanostructure n-ZnO/p-Si heterojunction diode was fabricated by sol-gel method. The structural and morphological properties of the nanostructure ZnO film have been investigated. The X-ray diffraction spectra indicated that the films are of polycrystalline nature. The scanning electron microscopy images indicate that the surface morphology of ZnO film is almost homogeneous and the ZnO film is consisted of the circular formed with coming together of the nanoparticles. The electrical characterization of nanostructure n-ZnO/p-Si heterojunction diode has been investigated by current-voltage characteristics. The ideality factor (n) of the diode was found for different ambient temperatures and the obtained 6.40 value for 296 K is higher than unity due to the interface states between the two semiconductor materials and series resistance. The values of n increased with decreasing ambient temperature. The reverse current of the diode increased with illumination intensity of 100 mW cm(-2) and the diode gave a maximum open circuit voltage V-oc of 0.19 V and short-circuits current I-sc of 8.03 x 10(-8) A. (c) 2012 Elsevier Ltd. All rights reserved.