The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Ardali S., Atmaca G., LİŞESİVDİN S. B., Malin T., Mansurov V., Zhuravlev K., ...More

Physica Status Solidi (B) Basic Research, vol.252, no.9, pp.1960-1965, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 252 Issue: 9
  • Publication Date: 2015
  • Doi Number: 10.1002/pssb.201552135
  • Journal Name: Physica Status Solidi (B) Basic Research
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1960-1965
  • Keywords: GaN, mobility, surface passivation, 2-DIMENSIONAL ELECTRON-GAS, FIELD-EFFECT TRANSISTORS, MOLECULAR-BEAM EPITAXY, ALGAN/GAN HETEROSTRUCTURES, PIEZOELECTRIC FIELD, INDUCED CHARGE, OPTIMIZATION, DENSITIES, LAYER, ALN
  • Anadolu University Affiliated: Yes

Abstract

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. Al0.3Ga0.7N/AlN/GaN heterostructures with different doping and layer structures were grown by molecular beam epitaxy with or without growing an in situ SiN passivation layer. The classical Hall effect measurements were carried out as a function of temperature in the range between T=1.82K and 270K at a fixed magnetic field in dark conditions. The effect of doping of the barrier layer and replacing an AlN inter-layer between the AlGaN barrier and the GaN layer, where the two-dimensional electron gas is populated, on mobility and sheet carrier concentration were also determined.